Part Number | MTD6N20ET4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Bourns Inc. |
Description | MOSFET N-CH 200V 6A DPAK |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
MTD6N20ET4G
BOURNS
65500
0.8
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MTD6N20ET4G
BOUNRS
2500
1.645
CRYSTALTEK CO., LIMITED
MTD6N20ET4G
BOURN
3048
2.49
Belt (HK) Electronics Co
MTD6N20ET4G
Bourns Inc
3030
3.335
FLOWER GROUP(HK)CO.,LTD
MTD6N20ET4G
BOURNSINC
817445
4.18
Cicotex Electronics (HK) Limited