Description
div id=gcsContainer> Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (8-pin SO). Fairchild FDS6670A. R1, R2. 2. 0.007 1%, 1/2W resistors (2010). IRC LR2010-01- R0007-F Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6612A . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 100 pF. 1. D1,D2. BAT54WT1. 2. L1. 4.6 H. 1. L2. 3.2 H. 1. Q2. FDS6984S. 1. Q3. FDS6612A . 1. Q10. FDS6680S. 1. R1,R3,R5,R13,R17. Open. 5. R2,R4,R15. L2. 1. 4 H, 6.2A power inductor. Sumida CDEP105(S)-4R0. N1, N3. 2 n-channel MOSFETs (SO8). Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (SO8). DESCRIPTION. L1, L2. 2. 5.8 H, 8.6A, 16.2m inductors. Sumida CDRH127/LD- 5R8NC. N1, N3. 2. 8.4A, 30V n-channel MOSFETs, SO-8. Fairchild FDS6612A .
Part Number | FDS6612A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Bourns Inc. |
Description | MOSFET N-CH 30V 8.4A 8-SOIC |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 8.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS6612A
BOURNS
16000
1.88
Finestock Electronics HK Limited
FDS6612A
BOUNRS
16784
3.265
HK HEQING ELECTRONICS LIMITED
FDS6612A
BOURN
5000
4.65
TIANHAO INDUSTRIAL CO., LIMITED
FDS6612A
Bourns Inc
273805
6.035
CIS Ltd (CHECK IC SOLUTION LIMITED)
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BOURNSINC
2365
7.42
Nosin (HK) Electronics Co.