Part Number | FDD5N50NZFTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Bourns Inc. |
Description | MOSFET N-CH 500V DPAK |
Series | UniFET-II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 1.85A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD5N50NZFTM
BOURNS
3249
0.36
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDD5N50NZFTM
BOUNRS
5689
0.94
Kunlida Electronics (HK) Limited
FDD5N50NZFTM
BOURN
2015
1.52
Hong Kong H.D.W Trading Co., Limited
FDD5N50NZFTM
Bourns Inc
3951
2.1
Green Parts Electronics (HK) Co.,Limited
FDD5N50NZFTM
BOURNSINC
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Yingxinyuan INT'L (Group) Limited