Part Number | BDT61B-S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Bourns Inc. |
Description | TRANS NPN DARL 100V 4A |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 1.5A |
Current - Collector Cutoff (Max) | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Power - Max | 2W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |
Image |
BDT61B-S
BOURNS
5245
1.81
Dedicate Electronics (HK) Limited
BDT61B-S
BOUNRS
32363
3.0175
Digchip Technology Co.,Limited
BDT61B-S
BOURN
8000
4.225
MY Group (Asia) Limited
BDT61B
Bourns Inc
5246
5.4325
Dedicate Electronics (HK) Limited
BDT61BF
BOURNSINC
28000
6.64
Digchip Technology Co.,Limited