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Description
The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is ALPHA & OMEGA. SEMICONDUCTOR. Document No. PD-00120. Version. E. Title. AO3415 Marking Description. SOT-23 PACKAGE MARKING DESCRIPTION . This AOS product reliability report summarizes the qualification result for AO3415 . Accelerated environmental tests are performed on a specific sample size, and 86. DEC 2014. NEW PRODUCT RELEASE. ANNOUNCEMENT www.taiwansemi .com. TSC. Vishay. AOS. TSM500P02CX. Si2399DS. AO3415 . TSM650P02CX. ON Semiconductors eFuses offer low cost, low impedance solutions for bus protection and offer much faster protection than many fuse solutions. They are an.
| Part Number | AO3415 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Bourns Inc. |
| Description | MOSFET P-CH 20V 4A SOT23 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3L |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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